MJE13007A GP BJT

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  • 13 MOTOROLA
  • 49 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 400V 8A 3-Pin(3+Tab) TO-220

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 1@400mA@2A 1.5@1A@5A
Maximum Collector Emitter Voltage 400 V
Maximum DC Collector Current 8 A
Maximum Emitter Base Voltage 9 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 2000 mW
Maximum Transition Frequency 4(Min) MHz
Type NPN