MJE1320 GP BJT

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  • 2 MOTOROLA
  • 5308 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 900V 2A 3-Pin(3+Tab) TO-220AB

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 1@0.5A@1A|2.5@1A@2A V
Maximum Collector Emitter Voltage 900 V
Maximum DC Collector Current 2 A
Maximum Emitter Base Voltage 9 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 80000 mW
Type NPN