MJE16004 GP BJT
Datasheet: View
Stock
- 58 MOTOROLA
- 6486 NEW JERSEY SEMICONDUCTOR
- 3 RF POWER
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Emitter Saturation Voltage | 1@0.15A@1.5A|2.5@0.3A@3A | V |
| Maximum Collector Emitter Voltage | 450 | V |
| Maximum DC Collector Current | 5 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 80000 | mW |
| Type | NPN |