MJE1661 GP BJT
Datasheet: View
Stock
- 3 MOTOROLA
- 5160 NEW JERSEY SEMICONDUCTOR
- 1 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Emitter Saturation Voltage | 1@0.2A@1.5A|2.5@0.4A@3A | V |
| Maximum Collector Emitter Voltage | 450 | V |
| Maximum DC Collector Current | 5 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 80000 | mW |
| Type | NPN |