MJE1661 GP BJT

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  • 3 MOTOROLA
  • 5160 NEW JERSEY SEMICONDUCTOR
  • 1 WORLD WIDE

Trans GP BJT NPN 450V 5A 3-Pin(3+Tab) TO-220AB

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 1@0.2A@1.5A|2.5@0.4A@3A V
Maximum Collector Emitter Voltage 450 V
Maximum DC Collector Current 5 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 80000 mW
Type NPN