MJE180 GP BJT
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- 1 FAIRCHILD
- 106 MOTOROLA
- 82 NATIONAL SEMICONDUCTOR
- 4262 NEW JERSEY SEMICONDUCTOR
- 63 SAMSUNG
- 452 ST MICRO
- 177 TOMSON
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Saturation Voltage | 0.3@50mA@500mA|0.9@150mA@1.5A|1.7@600mA@3A | V |
| Maximum Collector Emitter Voltage | 40 | V |
| Maximum DC Collector Current | 3 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 1500 | mW |
| Maximum Transition Frequency | 50(Min) | MHz |
| Type | NPN |