MJE18004 GP BJT
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- 8632 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Saturation Voltage | 0.5@0.1A@1A|0.45@0.4A@2A|0.75@0.5A@2.5A | V |
| Maximum Collector Emitter Voltage | 450 | V |
| Maximum DC Collector Current | 5 | A |
| Maximum Emitter Base Voltage | 9 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Transition Frequency | 13(Typ) | MHz |
| Type | NPN |