MJE181 GP BJT

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  • 575 CENTAL SEMI
  • 17 MICROSEMI CONDUCTOR
  • 6 MOTOROLA
  • 5730 NEW JERSEY SEMICONDUCTOR
  • 1 TOMSON
  • 92 WORLD WIDE

Trans GP BJT NPN 60V 3A 3-Pin TO-126 Box

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 80 V
Maximum Collector Emitter Saturation Voltage 0.3@50mA@500mA|0.9@150mA@1.5A|1.7@600mA@3A V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 3 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1500 mW
Maximum Transition Frequency 50(Min) MHz
Type NPN