MJE220 GP BJT

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  • 1491 NEW JERSEY SEMICONDUCTOR
  • 25 WORLD WIDE

Trans GP BJT NPN 40V 4A 3-Pin TO-126

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 0.3@50mA@500mA 0.8@200mA@2A
Maximum Collector Emitter Voltage 40 V
Maximum DC Collector Current 4 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1500 mW
Maximum Transition Frequency 10(Typ) MHz
Type NPN