MJE221 GP BJT

default part image

Datasheet: View

Stock

  • 862 NATIONAL SEMICONDUCTOR
  • 457 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 40V 4A 3-Pin TO-126

Request For Quote
Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 0.3@50mA@500mA 0.6@100mA@1A
Maximum Collector Emitter Voltage 40 V
Maximum DC Collector Current 4 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1500 mW
Maximum Transition Frequency 10(Typ) MHz
Type NPN