MJE2360T GP BJT
Datasheet: View
Stock
- 1 MOTOROLA
- 4107 NEW JERSEY SEMICONDUCTOR
- 11 WORLD WIDE
Trans GP BJT NPN 350V 0.5A 3-Pin TO-126
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 375 | V |
| Maximum Collector Emitter Saturation Voltage | 1.5@10mA@100mA | V |
| Maximum Collector Emitter Voltage | 350 | V |
| Maximum DC Collector Current | 0.5 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 30000 | mW |
| Maximum Transition Frequency | 10(Typ) | MHz |
| Type | NPN |