MJE2361T GP BJT

default part image

Datasheet: View

Stock

  • 1 MOTOROLA
  • 6107 NEW JERSEY SEMICONDUCTOR
  • 3 WORLD WIDE

Trans GP BJT NPN 350V 0.5A 3-Pin TO-126

Request For Quote
Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 375 V
Maximum Collector Emitter Saturation Voltage 1.5@10mA@100mA V
Maximum Collector Emitter Voltage 350 V
Maximum DC Collector Current 0.5 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 30000 mW
Maximum Transition Frequency 10(Typ) MHz
Type NPN