MJE242 GP BJT

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  • 118 NATIONAL SEMICONDUCTOR
  • 220 NEW JERSEY SEMICONDUCTOR
  • 138 WORLD WIDE

Trans GP BJT NPN 80V 4A 3-Pin TO-126

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 80 V
Maximum Collector Emitter Saturation Voltage 0.3@50mA@500mA V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 4 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1500 mW
Maximum Transition Frequency 2(Min) MHz
Type NPN