MJE251 GP BJT
Datasheet: View
Stock
- 3988 NEW JERSEY SEMICONDUCTOR
- 993 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 80 | V |
| Maximum Collector Emitter Saturation Voltage | 0.3@50mA@500mA|0.6@100mA@1A | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 4 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 1500 | mW |
| Maximum Transition Frequency | 2(Min) | MHz |
| Type | PNP |