MJE3055 GP BJT

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  • 1 ADT
  • 7251 MOTOROLA
  • 23615 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 60V 10A 3-Pin(3+Tab) TO-220

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 70 V
Maximum Collector Emitter Saturation Voltage 1.1@0.4A@4A 8@3.3A@10A
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 10 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 75000 mW
Maximum Transition Frequency 2(Min) MHz
Type NPN