MJE3055T GP BJT
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Stock
- 24 HMC
- 146 INTERNATIONAL DEVICES INC
- 26 MOTOROLA
- 556 NATIONAL SEMICONDUCTOR
- 11545 NEW JERSEY SEMICONDUCTOR
- 35 SGS
- 61 ST MICRO
- 98 VORTEX
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 70 | V |
| Maximum Collector Emitter Saturation Voltage | 1.1@0.4A@4A|8@3.3A@10A | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 10 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 75000 | mW |
| Maximum Transition Frequency | 2(Min) | MHz |
| Type | NPN |