MJE3439 GP BJT
Datasheet: View
Stock
- 2 CENTAL SEMI
- 4 MIXEL
- 97 MOTOROLA
- 1 NATIONAL SEMICONDUCTOR
- 3434 NEW JERSEY SEMICONDUCTOR
- 5 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 450 | V |
| Maximum Collector Emitter Saturation Voltage | 0.5@4mA@50mA | V |
| Maximum Collector Emitter Voltage | 350 | V |
| Maximum DC Collector Current | 0.3 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 15000 | mW |
| Maximum Transition Frequency | 15(Min) | MHz |
| Type | NPN |