MJE350 GP BJT
Datasheet: View
Stock
- 2 ADVANCED SEMI
- 388 MOTOROLA
- 33952 NEW JERSEY SEMICONDUCTOR
- 5 RFGAIN
- 4 RF POWER
- 8 SGS
- 11326 ST MICRO
- 10 WESTINGHOUSE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 300 | V |
| Maximum Collector Emitter Voltage | 300 | V |
| Maximum DC Collector Current | 0.5 | A |
| Maximum Emitter Base Voltage | 3 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 20800 | mW |
| Type | PNP |