MJE4340 GP BJT

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  • 2545 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 100V 20A 3-Pin(3+Tab) TO-247

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 100 V
Maximum Collector Emitter Saturation Voltage 2@800mA@8A 3.5@2A@16A
Maximum Collector Emitter Voltage 100 V
Maximum DC Collector Current 20 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 125000 mW
Maximum Transition Frequency 1(Min) MHz
Type NPN