MJE4350 GP BJT
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- 5901 NEW JERSEY SEMICONDUCTOR
Trans GP BJT PNP 100V 20A 3-Pin(3+Tab) TO-247
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 100 | V |
| Maximum Collector Emitter Saturation Voltage | 2@800mA@8A | 3.5@2A@16A |
| Maximum Collector Emitter Voltage | 100 | V |
| Maximum DC Collector Current | 20 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 125000 | mW |
| Maximum Transition Frequency | 1(Min) | MHz |
| Type | PNP |