MJE5190 GP BJT

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  • 490 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 40V 4A 3-Pin TO-225AA

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 40 V
Maximum Collector Emitter Saturation Voltage 0.6@0.15A@1.5A 1.4@1A@4A
Maximum Collector Emitter Voltage 40 V
Maximum DC Collector Current 4 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 60000 mW
Maximum Transition Frequency 2(Min) MHz
Type NPN