MJE521 GP BJT

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  • 29 MOTOROLA
  • 598 NATIONAL SEMICONDUCTOR
  • 6276 NEW JERSEY SEMICONDUCTOR
  • 1 OFG
  • 20 ST MICRO

Trans GP BJT NPN 40V 4A 3-Pin TO-225 Bulk

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 40 V
Maximum Collector Emitter Voltage 40 V
Maximum DC Collector Current 4 A
Maximum Emitter Base Voltage 4 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 40000 mW
Type NPN