MJE5731 GP BJT
Datasheet: View
Stock
- 869 MOTOROLA
- 2854 NEW JERSEY SEMICONDUCTOR
- 249 ON SEMI
Trans GP BJT PNP 350V 1A 3-Pin(3+Tab) TO-220AB Rail
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 350 | V |
| Maximum Collector Emitter Saturation Voltage | 1@0.2A@1A | V |
| Maximum Collector Emitter Voltage | 350 | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 40000 | mW |
| Maximum Transition Frequency | 10(Min) | MHz |
| Type | PNP |