MJE5731A GP BJT

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  • 3152 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 375V 1A 3-Pin(3+Tab) TO-220AB Rail

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 350 V
Maximum Collector Emitter Saturation Voltage 1@0.2A@1A V
Maximum Collector Emitter Voltage 375 V
Maximum DC Collector Current 1 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 40000 mW
Maximum Transition Frequency 10(Min) MHz
Type PNP