MJE5851 GP BJT
Datasheet: View
Stock
- 2705 NEW JERSEY SEMICONDUCTOR
- 3 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Emitter Saturation Voltage | 2@1A@4A|5@3A@8A | V |
| Maximum Collector Emitter Voltage | 350 | V |
| Maximum DC Collector Current | 8 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 80000 | mW |
| Type | PNP |