MJE710 GP BJT

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  • 6 NATIONAL SEMICONDUCTOR
  • 765 NEW JERSEY SEMICONDUCTOR
  • 25 RF POWER
  • 5 SOLID SATE
  • 161 WESTINGHOUSE
  • 2 WORLD WIDE

Trans GP BJT PNP 40V 1.5A 3-Pin TO-126

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 40 V
Maximum Collector Emitter Saturation Voltage 0.15@15mA@150mA 0.4@50mA@500mA
Maximum Collector Emitter Voltage 40 V
Maximum DC Collector Current 1.5 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1250 mW
Type PNP