MJE800 Darlington BJT
Datasheet: View
Stock
- 2 ADVANCED SEMI
- 12 MOTOROLA
- 9 NATIONAL SEMICONDUCTOR
- 4288 NEW JERSEY SEMICONDUCTOR
- 5 RF POWER
- 4 ST MICRO
- 2 UNITED PAGE
- 1 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum Continuous DC Collector Current | 4 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Minimum DC Current Gain | 100@4A@3V|750@2A@3V|750@1.5A@3V | |
| Minimum Operating Temperature | -55 | °C |
| Number of Elements per Chip | 1 | |
| Type | NPN |