MJF13009 GP BJT

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  • 7000 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 400V 8A 3-Pin(3+Tab) TO-220

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 1@0.4A@2A|2@1A@5A|3@2A@8A V
Maximum Collector Emitter Voltage 400 V
Maximum DC Collector Current 8 A
Maximum Emitter Base Voltage 9 V
Maximum Power Dissipation 40000 mW
Maximum Transition Frequency 14(Typ) MHz
Type NPN