MJF44H11 GP BJT

default part image

Datasheet: View

Stock

  • 6987 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 80V 10A 3-Pin(3+Tab) TO-220 Full-Pak Rail

Request For Quote Datasheet
Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 1@0.4A@8A V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 10 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 2000 mW
Maximum Transition Frequency 50(Typ) MHz
Type NPN