MJH10012 Darlington BJT
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Stock
- 1 MOTOROLA
- 5498 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Base Emitter Saturation Voltage | 2.5@0.6A@6A|3@2A@10A | V |
| Maximum Collector Base Voltage | 600 | V |
| Maximum Collector Emitter Voltage | 400 | V |
| Maximum Continuous DC Collector Current | 10 | A |
| Maximum Emitter Base Voltage | 8 | V |
| Maximum Operating Temperature | 150 | °C |
| Minimum DC Current Gain | 300@3A@6V|100@6A@6V|20@10A@6V | |
| Minimum Operating Temperature | -55 | °C |
| Number of Elements per Chip | 1 | |
| Type | NPN |