MJH16006 GP BJT
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Stock
- 11595 NEW JERSEY SEMICONDUCTOR
- 4 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Emitter Saturation Voltage | 0.7@0.6A@3A|1@1A@5A | V |
| Maximum Collector Emitter Voltage | 500 | V |
| Maximum DC Collector Current | 8 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 125000 | mW |
| Type | NPN |