MJW16010 GP BJT

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  • 7766 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 450V 15A 3-Pin(3+Tab) TO-247AE

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 2.5@0.7A@5A|3@1.3A@10A|3@1A@10A V
Maximum Collector Emitter Voltage 450 V
Maximum DC Collector Current 15 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 135000 mW
Type NPN