MPQ2222A GP BJT

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  • 7 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 40V 0.5A 14-Pin CDIP

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Features Values Unit
Category Bipolar Power
Configuration Quad
Material Si
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 0.3@15mA@150mA 1@50mA@500mA
Maximum Collector Emitter Voltage 40 V
Maximum DC Collector Current 0.5 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1900 mW
Maximum Transition Frequency 200(Min) MHz
Type NPN