MPQ6700 GP BJT

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  • 7 NATIONAL SEMICONDUCTOR
  • 331 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN/PNP 40V 0.2A 14-Pin TO-116 Sleeve

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Features Values Unit
Category Bipolar Power
Configuration Quad
Material Si
Maximum Collector Base Voltage 40 V
Maximum Collector Emitter Saturation Voltage 0.25@1mA@10mA V
Maximum Collector Emitter Voltage 40 V
Maximum DC Collector Current 0.2 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 2000 mW
Maximum Transition Frequency 200(Min) MHz
Type NPN PNP