MPS3415 GP BJT

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  • 1590 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 25V 0.5A 3-Pin TO-92 Box

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 25 V
Maximum Collector Emitter Saturation Voltage 0.3@3mA@50mA V
Maximum Collector Emitter Voltage 25 V
Maximum DC Collector Current 0.5 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 625 mW
Type NPN