MPS3567 RF BJT

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  • 2903 MOTOROLA
  • 1216 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 12V 0.05A 3-Pin TO-92 Bulk

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Features Values Unit
Configuration Single
Material Si
Maximum Collector Base Voltage 30 V
Maximum Collector Emitter Voltage 12 V
Maximum DC Collector Current 0.05 A
Maximum Emitter Base Voltage 2 V
Maximum Operating Temperature 150 °C
Maximum Transition Frequency 1500 MHz
Minimum DC Current Gain 20@8mA@10V
Minimum Operating Temperature -55 °C
Number of Elements per Chip 1
Type NPN