MPS5179 GP BJT

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  • 4958 MOTOROLA
  • 35880 NATIONAL SEMICONDUCTOR
  • 170 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 12V 0.05A 3-Pin TO-92 Box

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 20 V
Maximum Collector Emitter Saturation Voltage 0.4@1mA@10mA V
Maximum Collector Emitter Voltage 12 V
Maximum DC Collector Current 0.05 A
Maximum Emitter Base Voltage 2.5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 200000 mW
Maximum Transition Frequency 2000 MHz
Type NPN