MPS650 GP BJT
Datasheet: View
Stock
- 4140 MOTOROLA
- 11632 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Material | Si | |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Saturation Voltage | 0.3@100mA@1A|0.5@200mA@2A | V |
| Maximum Collector Emitter Voltage | 40 | V |
| Maximum DC Collector Current | 2 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 625 | mW |
| Maximum Transition Frequency | 75(Min) | MHz |
| Type | NPN |