MPS6513 GP BJT

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  • 120 GENERAL ELECTRIC
  • 10147 NATIONAL SEMICONDUCTOR
  • 4574 NEW JERSEY SEMICONDUCTOR
  • 1441 TEXAS INSTRUMENT

Trans GP BJT NPN 30V 0.1A 3-Pin TO-92 Box

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 40 V
Maximum Collector Emitter Saturation Voltage 0.5@5mA@50mA V
Maximum Collector Emitter Voltage 30 V
Maximum DC Collector Current 0.1 A
Maximum Emitter Base Voltage 4 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 625 mW
Type NPN