MPS6532 GP BJT

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  • 5146 NATIONAL SEMICONDUCTOR
  • 11788 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 30V 0.6A 3-Pin TO-92 Box

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 50 V
Maximum Collector Emitter Saturation Voltage 0.5@10mA@100mA V
Maximum Collector Emitter Voltage 30 V
Maximum DC Collector Current 0.6 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 625 mW
Maximum Transition Frequency 300(Typ) MHz
Type NPN