MPS6533 GP BJT

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  • 150 INTERMETALL
  • 41 NATIONAL SEMICONDUCTOR
  • 12160 NEW JERSEY SEMICONDUCTOR
  • 470 TEXAS INSTRUMENT
  • 1961 TOMSON

Trans GP BJT PNP 40V 0.6A

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 40 V
Maximum Collector Emitter Saturation Voltage 0.5@10mA@100mA V
Maximum Collector Emitter Voltage 40 V
Maximum DC Collector Current 0.6 A
Maximum Emitter Base Voltage 4 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 625 mW
Maximum Transition Frequency 250(Typ) MHz
Type PNP