MPS6573 GP BJT

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  • 11138 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 35V 0.1A

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 35 V
Maximum Collector Emitter Saturation Voltage 0.5@1mA@10mA V
Maximum Collector Emitter Voltage 35 V
Maximum DC Collector Current 0.1 A
Maximum Emitter Base Voltage 4 V
Maximum Operating Temperature 150 ᄀC
Maximum Power Dissipation 350 mW
Maximum Transition Frequency 350 MHz
Type NPN