MPS6574 GP BJT

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  • 12478 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 35V 0.2A

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Features Values Unit
Category Bipolar Small Signal
Material Si
Maximum Collector Base Voltage 35 V
Maximum Collector Emitter Voltage 35 V
Maximum DC Collector Current 0.2 A
Maximum Operating Temperature 150 ᄀC
Maximum Power Dissipation 310 mW
Maximum Transition Frequency 100 MHz
Type NPN