MPS6602 GP BJT

default part image

Datasheet: View

Stock

  • 0 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 30V 1A 3-Pin TO-92 Bulk

Request For Quote Datasheet
Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Base Voltage 40 V
Maximum Collector Emitter Saturation Voltage 0.6@100mA@1000mA V
Maximum Collector Emitter Voltage 30 V
Maximum DC Collector Current 1 A
Maximum Emitter Base Voltage 4 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 625000 mW
Maximum Transition Frequency 100(Min) MHz
Type NPN