MPS834 GP BJT

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  • 280 MOTOROLA
  • 1 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 80V 0.5A 3-Pin TO-92 Box

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 80(Min) V
Maximum Collector Emitter Saturation Voltage 0.3@100mA V
Maximum Collector Emitter Voltage 80(Min) V
Maximum DC Collector Current 0.5 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 625 mW
Maximum Transition Frequency 150(Min) MHz
Type NPN