MPSA45 GP BJT

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  • 284 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 350V 0.3A 3-Pin TO-92 Box

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 400 V
Maximum Collector Emitter Saturation Voltage 0.4@0.1mA@1mA 0.5@1mA@10mA
Maximum Collector Emitter Voltage 350 V
Maximum DC Collector Current 0.3 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 625 mW
Maximum Transition Frequency 20(Min) MHz
Type NPN