MPSH10 GP BJT
Datasheet: View
Stock
- 149 MOTOROLA
- 6510 NATIONAL SEMICONDUCTOR
- 10674 NEW JERSEY SEMICONDUCTOR
Trans GP BJT NPN 25V 3-Pin TO-92 Box
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 30 | V |
| Maximum Collector Emitter Saturation Voltage | 0.5@0.4mA@4mA | V |
| Maximum Collector Emitter Voltage | 25 | V |
| Maximum Emitter Base Voltage | 3 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 350000 | mW |
| Maximum Transition Frequency | 650(Min) | MHz |
| Type | NPN |