MPSW05 GP BJT

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  • 118 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 60V 0.5A 3-Pin TO-92 Bulk

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 0.4@10mA@250mA V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 0.5 A
Maximum Emitter Base Voltage 4 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1000 mW
Maximum Transition Frequency 50(Min) MHz
Type NPN