MRF227 RF BJT

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  • 298 MICROSEMI CONDUCTOR
  • 1 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 18V 7A 4-Pin Case 211-07

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Features Values Unit
Configuration Single Dual Emitter
Material Si
Maximum Collector Base Voltage 36 V
Maximum Collector Emitter Voltage 18 V
Maximum DC Collector Current 7 A
Maximum Emitter Base Voltage 4 V
Maximum Operating Temperature 200 °C
Minimum DC Current Gain 5@1A@5V
Minimum Operating Temperature -65 °C
Number of Elements per Chip 1
Output Power 40 W
Type NPN