MRF247 RF BJT

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  • 299 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 18V 20A 4-Pin Case 316-01

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Features Values Unit
Configuration Single Quad Emitter
Material Si
Maximum Collector Base Voltage 36 V
Maximum Collector Emitter Voltage 18 V
Maximum DC Collector Current 20 A
Maximum Emitter Base Voltage 4 V
Minimum DC Current Gain 10@5A@5V
Number of Elements per Chip 1
Output Power 75 W
Type NPN