MRF448 RF BJT

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  • 2 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 50V 16A 4-Pin Case 211-11

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Features Values Unit
Configuration Single Dual Emitter
Material Si
Maximum Collector Base Voltage 100 V
Maximum Collector Emitter Voltage 50 V
Maximum DC Collector Current 16 A
Maximum Emitter Base Voltage 4 V
Minimum DC Current Gain 10@5A@10V
Number of Elements per Chip 1
Output Power 250 W
Type NPN